onsemiUnited States
PNP SILICON TRANSISTOR
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage140 V
Collector current12 AMax
DC current gain1001A
Power2.5 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| Current - Collector (Ic) (Max) | 12 A |
| Power - Max | 2.5 W |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 10MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P-3 |
| Other | |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |