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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage230 V
Collector current1 AMax
DC current gain100100mA
Power2 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max2 W
Voltage - Collector Emitter Breakdown (Max)230 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS
Other
Base Product Number2SC4793
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA

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