SanyoJapan
NPN SILICON TRANSISTOR
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage25 V
Collector current2.5 AMax
DC current gain140100mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 2.5 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Environment and package | |
| Grade | - |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Qualification | - |
| Supplier Device Package | 3-MP |
| Other | |
| Mfr | Sanyo |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 75mA, 1.5A |
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