LGE(鲁光)China
商品目录 场效应管(MOSFET)；类型 1个P沟道；漏源电压(Vdss) 30V；连续漏极电流(Id) 4.1A；功率(Pd) 350mW；导通电阻(RDS(on)@Vgs,Id) 60mΩ@10V,4.1A；阈值电压(Vgs(th)@Id) 3V@250uA
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current4.1 A
On-resistance43 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 4.1A |
| Other | |
| 导通电阻(RDS(on)) | 43mΩ@10V |
| 耗散功率(Pd) | 1.2W |