Linear Integrated Systems, Inc.United States
3N163 DIE
Transistors - FETs, MOSFETs - Single1个P沟道 耐压:40V 电流:50mA
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current50 mA
On-resistance250 ΩMax · 20V
| Power | |
|---|---|
| 漏源电压(Vdss) | 40V |
| 连续漏极电流(Id) | 50mA |
| Other | |
| 导通电阻(RDS(on)) | 250Ω@20V |
| 数量 | 1个P沟道 |
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