Vishay SiliconixUnited States
MOSFET P-CH 40V 50MA TO72
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage40 V
Continuous drain current50 mA
On-resistance250 ΩMax · 100μA
Gate threshold voltage5 VMax · 10μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | 375mW (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Other | |
| Base Product Number | 3N163 |
| FET Feature | - |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5 pF @ 15 V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 250Ohm @ 100µA, 20V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
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