Goford SemiconductorTaiwan, China
MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | SOT-23-6L DUAL |
| Other | |
| Ciss (pF) | 300/405 |
| Compliance | RoHS,Halogen Free |
| Crss (pF) | 80/55 |
| ESD Diode | NO |
| Id (A) | 2.9/-3 |
| Pd (W) | 1.1 |
| Qgd (nC) | 1.2/1.3 |
| Qg (nC) | 4/3.3 |
| Qgs (nC) | 0.65/0.7 |
| Rds(on) mΩ(max) @Vgs=2.5V | 59/140 |
| Rds(on) mΩ(max) @Vgs=4.5V | 45/110 |
| Rds(on) mΩ(typ) @Vgs=2.5V | 37/110 |
| Rds(on) mΩ(typ) @Vgs=4.5V | 30/80 |
| Technology | TRENCH |
| Type | N+P |
| Vds (V) | 20/-20 |
| Vgs(th) max(V) | 1.2/-1 |
| Vgs (V) | ±12 |