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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage60 V
Continuous drain current370 mA
On-resistance4.2 ΩMax · 190mA
Power
Current - Continuous Drain (Id) @ 25°C370mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Power Dissipation (Max)-
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-CPH
Other
Base Product Number6HP04
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds24.1 pF @ 20 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.2Ohm @ 190mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

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