6N137

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The 6N137 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed integrated photo-detector logic gate with a strobable output in a plastic DIP8 package with different lead forming options.

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Technical parameters

Power
Enable Voltage	V E \| VCC+0.5 \| V
Forward Current	I F \| 25 \| mA
Input Power Dissipation	P I \| 100 \| mW
Isolation Voltage	V iso \| 5000 \| Vrms \| 3
Output Current	I O \| 50 \| mA
Output Power Dissipation	P O \| 85 \| mW
Output Voltage	V O \| 7 \| V
Peak Forward Current	I FP \| 50 \| mA \| 1
Peak Transient Current	I F(trans) \| 1 \| A \| 2
Reverse Voltage	V R \| 5 \| V
Supply Voltage	V CC \| 7 \| V
Total Power Dissipation	P tot \| 200 \| mW
Environment and package
Operating Temperature	T opr \| - 40 ~100 \| °C
Soldering Temperature	T sol \| 260 \| °C \| 4
Storage Temperature	T stg \| -55~125 \| °C
Other
Parameter	Symbol \| Value \| Unit \| Note

Documents

DatasheetDatasheet · 4.4 MB · 2026-09-23

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