Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 300V 8A TO262-3
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View full reportTechnical parameters
Key specs
Reverse voltage300 V
Average rectified current8 A
Forward voltage1.25 VMax · 8 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 20 µA @ 300 V |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 8 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -65°C~175°C |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262-3 |
| Other | |
| Base Product Number | 8ETH03 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 35 ns |
| Series | FRED Pt® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |