Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 1.2KV 8A DPAK
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View full reportTechnical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current8 A
Forward voltage1.3 VMax · 8 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 8 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA (DPAK) |
| Other | |
| Base Product Number | 8EWF12 |
| Capacitance @ Vr, F | - |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Reverse Recovery Time (trr) | 270 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |