VishayUnited States

96079

Active

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A

See alternatives Ask AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

No technical parameters are available for this part.

Documents

DatasheetDatasheet · 185.8 KB · 2026-09-24 OtherOther · 6.5 MB · 2026-09-24 OtherOther · 1.5 MB · 2026-09-24 OtherOther · 1.4 MB · 2026-09-24 OtherOther · 86.4 KB · 2026-09-24 Application NoteApplication Note · 70.2 KB · 2026-09-24 Package DrawingPackage Drawing · 28.0 KB · 2026-09-24

Open document center