All alternatives

View full report

Technical parameters

Power
ID-最大漏极电流4A
VDSS-最大漏源电压20V
AC and DC characteristics
RDS(on)-漏源导通阻抗80mΩ
Environment and package
封装类型1SOT89
Other
Ciss-输入等效电容570pF
Pd-功率耗散0.5W
Qg-栅极电荷NnC
Vgs-栅源耐压12V
内置ESD保护二极管0
内置整流二极管0
引脚数量13

Documents