ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
AD30N10S
Single FETs, MOSFETsAll alternatives
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Technical parameters
| Power | |
|---|---|
| Id-额定电流 | 30A |
| AC and DC characteristics | |
| Ron-最大导通阻抗 | 38mΩ |
| Environment and package | |
| 封装类型1 | TO252 |
| Other | |
| Pd-最大功率耗散 | 89W |
| Qg-栅极电荷 | NnC |
| Vdss-漏源耐压 | 100V |
| 引脚数量1 | 3 |
| 集成ESD保护二极管 | 0 |
| 集成整流二极管 | 0 |
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