ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
停产 N沟道,电流:12A,耐压:650V
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current12 A
On-resistance850 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 12A |
| Other | |
| 导通电阻(RDS(on)) | 850mΩ@10V |
| 数量 | 1个N沟道 |