Rohm SemiconductorJapan
N-channel 80V 79A, HPLF5060T5LSAH, Power MOSFET for Automotive
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View full reportTechnical parameters
| Power | |
|---|---|
| Drain Current I D [A] | 79 |
| Drain-Source Voltage V DSS [V] | 80 |
| Drive Voltage[V] | 6 |
| Power Dissipation (PD)[W] | 75 |
| Environment and package | |
| Mounting Style | Surface mount |
| Package Code | HPLF5060T5LSAH |
| Package Size [mm] | 6.0x4.9 (t=1.2) |
| Storage Temperature (Max)[℃] | 175 |
| Storage Temperature (Min)[℃] | -55 |
| Other | |
| Common Standard | AEC-Q101 (Automotive Grade) |
| Number of terminal | 5 |
| Polarity | N |
| R DS(on) [Ω] V GS =10V(Typ) | 0.0092 |
| R DS(on) [Ω] V GS =6V(Typ) | 0.0131 |
| R DS(on) [Ω] V GS =Drive(Typ) | 0.0131 |
| Total gate charge Q g [nC] | 9.8 |
| trr (Typ.)[ns] | 37 |