Rohm SemiconductorJapan
Nch 80V 40A, DFN3333T8LSAB, Power MOSFET for Automotive
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Drain Current I D [A] | 40 |
| Drain-Source Voltage V DSS [V] | 80 |
| Drive Voltage[V] | 6 |
| Power Dissipation (PD)[W] | 62 |
| Environment and package | |
| Mounting Style | Surface mount |
| Package Code | DFN3333T8LSAB |
| Package Size [mm] | 3.3x3.3 (t=1.1) |
| Storage Temperature (Max)[℃] | 175 |
| Storage Temperature (Min)[℃] | -55 |
| Other | |
| Common Standard | AEC-Q101 (Automotive Grade) |
| Number of terminal | 8 |
| Polarity | Nch |
| R DS(on) [Ω] V GS =10V(Typ) | 0.009 |
| R DS(on) [Ω] V GS =6V(Typ) | 0.0129 |
| R DS(on) [Ω] V GS =Drive(Typ) | 0.0129 |
| Total gate charge Q g [nC] | 9.8 |
| trr (Typ.)[ns] | 37 |