BORN(伯恩半导体)China
MOSFET,N-channel 30V/12V 5.8A VGS(th)=1.1V 29mΩ@5.8A&10V,SOT-23
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current5.8 A
On-resistance32 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5.8A |
| Other | |
| 导通电阻(RDS(on)) | 32mΩ@10V,5.8A |
| 数量 | 1个N沟道 |