IDCHIP(英锐芯)China
P沟道,电流:4.2A,耐压:30V
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current4.2 A
On-resistance90 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 4.2A |
| Other | |
| 导通电阻(RDS(on)) | 90mΩ@2.5V |
| 数量 | 1个P沟道 |