BORN(伯恩半导体)China
MOSFET,P-channel 30V/12V 4.2A VGS(th)=1V 45mΩ@4.2A&10V,SOT-23
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current4.2 A
On-resistance85 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 4.2A |
| Other | |
| 导通电阻(RDS(on)) | 85mΩ@2.5V |
| 数量 | 1个P沟道 |