UMWMalaysia
30V 4.1A 65MR@10V,4.2A 350MW 1.3
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current4.2 A
On-resistance50 mΩMax · 4.2A
Gate threshold voltage1.3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 954 pF @ 15 V |
| Mfr | UMW |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.2A, 10V |
| Series | UMW |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |