BORN(伯恩半导体)China
1个N沟道 耐压:30V 电流:5A
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current5 A
On-resistance83 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 5A |
| Other | |
| 导通电阻(RDS(on)) | 83mΩ@2.5V,2A |
| 数量 | 1个N沟道 |