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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current3 A
On-resistance97 mΩMax · 3A
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.4W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Supplier Device PackageSOT-23-3
Other
Base Product NumberAO34
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 10 V
MfrAlpha & Omega Semiconductor Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs97mOhm @ 3A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

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