YTL(亚特联)China
N沟道MOSFET，具备低栅极电荷、低Cdv/dt效应、高单元密度和沟槽技术
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current6 A
On-resistance17 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 6A |
| Other | |
| 导通电阻(RDS(on)) | 17mΩ@4.5V |
| 数量 | 1个N沟道 |
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