VBsemi(微碧半导体)China
AO3423A-VB
Transistors - FETs, MOSFETs - SingleSOT23；P—Channel沟道,-20V；-4A；RDS(ON)=60mΩ@VGS=4.5V,VGS=±12V；Vth=-0.5~-1.5V；
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current4 A
On-resistance80 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 4A |
| Other | |
| 导通电阻(RDS(on)) | 80mΩ@2.5V |
| 耗散功率(Pd) | 1.6W |