APM(永源微电子)China
30V P沟道增强型MOSFET,电流:-4.3A,耐压:-30V
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current4.3 A
On-resistance55 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 4.3A |
| Other | |
| 导通电阻(RDS(on)) | 55mΩ@10V |
| 数量 | 1个P沟道 |