APT47N60BC3G-MOSFET

Not For New DesignsSCRs - ModulesTO-247-3

SuperJunction MOSFETs deliver high efficiency, reliability, and power density for demanding high voltage applications. Very low conduction and switching losses improve energy efficiency and reduce heat generation in power conversion systems. The low gate charge enables fast switching and lower drive requirements, while the fast recovery body diode minimizes reverse recovery charge (Qrr), reducing EMI in high frequency designs. With avalanche energy rated for rugged operation, these SuperJunction MOSFETs provide reliable performance in both continuous and pulsed conditions.

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Technical parameters

Power
Continuous Drain Current Max (Ampere)	47
Drain Source Voltage Max V (volt)	600
Power Dissipation (W) [max]	417
Environment and package
Package	TO-247-3
Other
Input Capacitance (pF) [Typ]	7015
On-State Resistance (milliohms) [max] (mΩ)	70
Part Type	MOSFET
Reverse Recovery Charge (Qrr) (µC) [Typ.]	23
Technology	SuperJunction
Total Gate Charge (nC) [Typ]	260
Turn Off Switching Energy [Eoff] (µJ) [Typ.]	980
Turn On Switching Energy [Eon] (µJ) [Typ.]	670

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