Microchip TechnologyUnited States
MOSFET N-CH 600V 47A TO247
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current47 A
On-resistance70 mΩMax · 30A
Gate threshold voltage3.9 VMax · 2.7mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 417W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Other | |
| Base Product Number | APT47N60 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7015 pF @ 25 V |
| Mfr | Microchip Technology |
| Packaging | Tube |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 30A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
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