Microchip TechnologyUnited States
APT50GT120B2RDLG
IGBT Devices and Modules - Unspecified TypeAPT50GT120B2RDLG
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View full reportTechnical parameters
Key specs
Collector-emitter voltage1.2 kV
Collector current106 AMax
Power694 WMax
| Power | |
|---|---|
| 集射极击穿电压(Vces) | 1.2kV |
| 集电极电流(Ic) | 106A |
| Other | |
| IGBT类型 | NPT(非穿通型) |
| 耗散功率(Pd) | 694W |