Figure 1. Pin Assignment (Top …

AS4C4M32S-6TCN

ObsoleteMemory86 pin TSOP II

IC DRAM 128MBIT PAR 86TSOP II

AS4C4M32S-6TCN is a 128Mbit (4M x 32) Synchronous DRAM in an 86-pin TSOP II package, operating at 3.3V with a 166MHz clock frequency and commercial temperature range.Checked against the datasheet

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Technical parameters

Key specs

Memory typeDRAM

Memory size128 Mbit

InterfaceParallel

Supply voltage3 ~ 3.6 V

Clock frequency166 MHzMax

Datasheet-verified parameters

27 items

Parameter	Value and test conditions	Source
Memory Type	Synchronous DRAM (SDRAM)
Capacity	128 Mbits (4M x 32)
Interface	LVTTL
Supply Voltage	VDD: Min 3.0V, Typ 3.3V, Max 3.6V; VDDQ: Min 3.0V, Typ 3.3V, Max 3.6V
Clock Frequency	166MHz
Package	86 pin TSOP II
Operating Temperature	Commercial (0 ~ 70°C)
Grade	Commercial
Lead Free	Pb free
Halogen Free	Halogen free
Clock Cycle Time	Min 6ns (CL=3), Min 10ns (CL=2)
Access Time	Max 5.5ns (CL=3), Max 6ns (CL=2)
Row Active Time	Min 42ns, Max 100k ns
Row Cycle Time	Min 60ns
RAS to CAS Delay	Min 18ns
Precharge Time	Min 18ns
Refresh Interval	Max 15.6 μs
Input High Voltage	Min 2.0V, Typ 2.5V, Max VDDQ+0.3V
Input Low Voltage	Min -0.3V, Typ 0V, Max 0.8V
Output High Voltage	Min 2.4V
Output Low Voltage	Max 0.4V
Input Leakage Current	Min -1.5 μA, Max 1.5 μA
Absolute Maximum Rating - Supply Voltage	-1.0 ~ +4.6 V
Absolute Maximum Rating - Ambient Temperature	0 ~ +70 °C
Absolute Maximum Rating - Storage Temperature	-55 ~ +150 °C
Absolute Maximum Rating - Power Dissipation	1.0 W
Absolute Maximum Rating - Short Circuit Output Current	50 mA

All parameters (19)ExpandCollapse

Power
Voltage - Supply	3V ~ 3.6V
AC and DC characteristics
Clock Frequency	166 MHz
Environment and package
Memory Size	128Mbit
Mounting Type	Surface Mount
Operating Temperature	0°C~70°C(TA)
Package	Tray
Package / Case	86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package	86-TSOP II
Other
Access Time	5.5 ns
Base Product Number	AS4C4M32
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	4M x 32
Memory Type	Volatile
Mfr	Alliance Memory, Inc.
Product Status	Obsolete
Series	-
Technology	SDRAM
Write Cycle Time - Word, Page	2ns

Pinout and package

Pin	Name	Function	Source
1		VDD: Power Supply
2		DQ0: Data I/O
3		VDDQ: DQ Power
4		DQ1: Data I/O
5		DQ2: Data I/O
6		VSSQ: DQ Ground
7		DQ3: Data I/O
8		DQ4: Data I/O
9		VDDQ: DQ Power
10		DQ5: Data I/O
11		DQ6: Data I/O
12		VSSQ: DQ Ground
13		DQ7: Data I/O
14		NC: No Connect
15		VDD: Power Supply
16		DQM0: Data Input/Output Mask
17		WE#: Write Enable
18		CAS#: Column Address Strobe
19		RAS#: Row Address Strobe
20		CS#: Chip Select
21		A11: Address Input
22		BS0: Bank Activate
23		BS1: Bank Activate
24		A10/AP: Address Input/Auto Precharge
25		A0: Address Input
26		A1: Address Input
27		A2: Address Input
28		DQM2: Data Input/Output Mask
29		VDD: Power Supply
30		NC: No Connect
31		DQ16: Data I/O
32		VSSQ: DQ Ground
33		DQ17: Data I/O
34		DQ18: Data I/O
35		VDDQ: DQ Power
36		DQ19: Data I/O
37		DQ20: Data I/O
38		VSSQ: DQ Ground
39		DQ21: Data I/O
40		DQ22: Data I/O
41		VDDQ: DQ Power
42		DQ23: Data I/O
43		VDD: Power Supply
44		VSSQ: DQ Ground
45		VSSQ: DQ Ground
46		VSSQ: DQ Ground
47		VSSQ: DQ Ground
48		VSSQ: DQ Ground
49		VSSQ: DQ Ground
50		VSSQ: DQ Ground
51		VSSQ: DQ Ground
52		VSSQ: DQ Ground
53		VSSQ: DQ Ground
54		VSSQ: DQ Ground
55		VSSQ: DQ Ground
56		VSSQ: DQ Ground
57		VSSQ: DQ Ground
58		VSSQ: DQ Ground
59		VSSQ: DQ Ground
60		VSSQ: DQ Ground
61		VSSQ: DQ Ground
62		VSSQ: DQ Ground
63		VSSQ: DQ Ground
64		VSSQ: DQ Ground

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