Vishay General Semiconductor - Diodes DivisionUnited States
DIODE AVALANCHE 1KV 1.3A TO277A
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View full reportTechnical parameters
Key specs
Reverse voltage1 kV
Average rectified current1.3 A
Forward voltage2.5 VMax · 2 A
TypeFast recoveryFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.3A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 2.5 V @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Other | |
| Base Product Number | AU2 |
| Capacitance @ Vr, F | 29pF @ 4V, 1MHz |
| Diode Type | Avalanche |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Active |
| Reverse Recovery Time (trr) | 75 ns |
| Series | Automotive, AEC-Q101, eSMP® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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