ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
AU80N10S
Single FETs, MOSFETsAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 80A |
| VDSS-最大漏源电压 | 100V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 8mΩ |
| Environment and package | |
| 封装类型1 | TO251 |
| Other | |
| Pd-功率耗散 | 125W |
| Qg-栅极电荷 | NnC |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |
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