Taiwan Semiconductor CorporationTaiwan, China
BA158GHB0G
Diodes - Rectifiers - SingleDIODE GEN PURP 600V 1A DO204AL
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current1 A
Forward voltage1.2 VMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 1 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Bulk |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-204AL (DO-41) |
| Other | |
| Base Product Number | BA158 |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Discontinued at Digi-Key |
| Reverse Recovery Time (trr) | 150 ns |
| Series | Automotive, AEC-Q101 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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