Infineon TechnologiesGermany
DIODE GEN PURP 80V 250MA SOT23-3
All alternatives
View full report61 alternatives on file, including 17 Chinese alternatives. Sign in to view them.
Technical parameters
Key specs
Reverse voltage80 V
Average rectified current250 mA
Forward voltage1.25 VMax · 150 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 250mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 70 V |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C(Max) |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT23-3 (TO-236) |
| Other | |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Diode Type | Standard |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Series | Automotive, AEC-Q101 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |