Yangjie TechnologyChina
DIODE GEN PURP 100V 215MA SOT23
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View full reportTechnical parameters
Key specs
Reverse voltage100 V
Average rectified current215 mA
Forward voltage1.25 VMax · 100 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 215mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 100 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Other | |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Diode Type | Standard |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Reverse Recovery Time (trr) | 4 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Documents
DatasheetDatasheet · 475.8 KB · 2026-09-29DatasheetDatasheet · 294.2 KB · 2026-09-22EnvironmentalEnvironmental · 5.9 MB · 2026-09-22EnvironmentalEnvironmental · 5.8 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 265.5 KB · 2026-09-22
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