Rohm SemiconductorJapan
DIODE GEN PURP 80V 100MA SSD3
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View full reportTechnical parameters
Key specs
Reverse voltage80 V
Average rectified current100 mA
Forward voltage1.2 VMax · 100 mA
TypeStandardSmall Signal =< 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 100mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 70 V |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SSD3 |
| Other | |
| Base Product Number | BAS16 |
| Capacitance @ Vr, F | 3.5pF @ 6V, 1MHz |
| Diode Type | Standard |
| Mfr | Rohm Semiconductor |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 4 ns |
| Series | - |
| Speed | Small Signal =< 200mA (Io), Any Speed |
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