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Technical parameters

Key specs

Reverse voltage75 V
Average rectified current200 mA
Forward voltage750 mVMax · IF=5mA,IF=100mA
TypeSwitching

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
Peak Repetitive Reverse VoltageMax 75 V
Continuous forward currentMax 200 mA
Forward VoltageMin 620 mV, Max 750 mV @ IF=5mA; Min 750 mV, Max 1000 mV @ IF=100mA
Diode TypeHigh Speed Switching Diode
PackageMiniMELF, Glass
Operation/Storage Temp. Range-65 to 200 °C
RoHS CompliantCompliant
Reverse Breakdown Volt.Min 100 V @ IR=100μA
Reverse CurrentMax 25 nA @ VR=20V; Max 550 nA @ VR=75V; Max 100 μA @ VR=20V, Tj=150°C; Max 100 μA @ VR=75V, Tj=150°C
Junction CapacitanceMax 2.0 pF @ VR=0V, f=1.0MHz
Reverse Recovery TimeMax 4 ns @ IF=IR=10mA, Irr=1mA, RL=100OHMS
Repetitive peak Forward CurrentMax 450 mA
Non-rep. Peak Forward CurrentMax 410.5 A @ t=1us, t=1ms, t=1s
Power DissipationMax 500 mW
Thermal ResistanceMax 350 K/W
Moisture Sensitivity LevelLevel 1
All parameters (8)ExpandCollapse
Power
Continuous forward current200 mA (Max)
Forward Voltage750 mV (Max)
Peak Repetitive Reverse Voltage75 V (Max)
Power Dissipation500 mW (Max)
Environment and package
CaseMiniMELF
Operation/Storage Temp. Range-65 to 200 °C
Other
Reverse Breakdown Volt.100 V (Min)
Reverse Recovery Time4 ns (Max)

Pinout and package

PackageMiniMELF, Glass

PinNameFunctionSource
AAnode
CCathode

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