Diodes IncorporatedUnited States
DIODE GEN PURP 325V 400MA 2DFN
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View full reportTechnical parameters
Key specs
Reverse voltage325 V
Average rectified current400 mA
Forward voltage1.1 VMax · 100 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 400mA |
| Current - Reverse Leakage @ Vr | 150 nA @ 250 V |
| Voltage - DC Reverse (Vr) (Max) | 325 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 100 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C~150°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 0402 (1006 Metric) |
| Supplier Device Package | X1-DFN1006-2 |
| Other | |
| Base Product Number | BAS521 |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Diode Type | Standard |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 50 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |