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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current200 mAMax
DC current gain2502mA
Power300 mWMax
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)200 mA
Power - Max300 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2mA, 5V
Frequency - Transition280MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
Base Product NumberBC184
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA

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