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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage25 V
Collector current800 mAMax
DC current gain100100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)800 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)25 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberBC338
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA

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