onsemiUnited States
SMALL SIGNAL BIPOLAR TRANSISTOR,
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 500mW |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Other | |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |