All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current100 mAMax
DC current gain1102mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrTaiwan Semiconductor Corporation
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

Documents