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Technical parameters

Key specs

TypePNP
Collector-emitter voltage65 V
Collector current100 mAMax
DC current gain1102mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)65 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
MfrFairchild Semiconductor
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA

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