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Technical parameters

Key specs

TypePNP
Collector-emitter voltage45 V
Collector current800 mAMax
DC current gain160100mA
Power310 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)800 mA
Power - Max310 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition100MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageStrip
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
MfrDiotec Semiconductor
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA

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