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Technical parameters

Key specs

TypePNP
Collector-emitter voltage45 V
Collector current500 mAMax
DC current gain250100mA
Power300 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)500 mA
Power - Max300 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 1V
Frequency - Transition100MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
Base Product NumberBC807
MfrTaiwan Semiconductor Corporation
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA

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