NXP USA Inc.Netherlands
NOW NEXPERIA BC817W - SMALL SIGN
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Technical parameters
Key specs
TypeNPN
Collector-emitter voltage45 V
Collector current500 mAMax
DC current gain100100mA
Power200 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 500 mA |
| Power - Max | 200 mW |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SOT-323 |
| Other | |
| Mfr | NXP USA Inc. |
| Product Status | Active |
| Series | Automotive, AEC-Q101 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
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