FUXINSEMI(富芯森美)China
BC846BDW1T1G-FS
Bipolar Transistors - Unspecified Type特性：一个封装内有两个晶体管。减少组件数量和电路板空间。晶体管之间无相互干扰
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View full reportTechnical parameters
Key specs
Collector-emitter voltage65 V
Collector current100 mAMax
DC current gain2002mA
Power200 mWMax
| Power | |
|---|---|
| 集射极击穿电压(Vceo) | 65V |
| 集电极电流(Ic) | 100mA |
| AC and DC characteristics | |
| 直流电流增益(hFE) | 200@2mA,5V |
| Other | |
| 耗散功率(Pd) | 200mW |
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