All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
Collector current100 mAMax
DC current gain1102mA
Power250 mWMax
Power
Current - Collector Cutoff (Max)15nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max250 mW
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Frequency - Transition300MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageStrip
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
MfrDiotec Semiconductor
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA

Documents