Yangjie TechnologyChina
Transistors - Bipolar (BJT) - Si
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View full reportTechnical parameters
Key specs
TypePNP
Collector-emitter voltage45 V
Collector current100 mAMax
DC current gain4202mA
Power150 mWMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Supplier Device Package | SOT-523 |
| Other | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Documents
DatasheetDatasheet · 282.0 KB · 2026-09-22EnvironmentalEnvironmental · 5.9 MB · 2026-09-22EnvironmentalEnvironmental · 5.8 MB · 2026-09-22EnvironmentalEnvironmental · 1.5 MB · 2026-09-22EnvironmentalEnvironmental · 1.4 MB · 2026-09-22Package DrawingPackage Drawing · 249.3 KB · 2026-09-22
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