All alternatives

View full report

Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current1.2 AMax
DC current gain40150mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1.2 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition-
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4
Other
Mfronsemi
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA

Documents